Faculty Directory

Phaneuf, Ray

Phaneuf, Ray

Member, Laboratory for Physical Sciences
Fellow, APS
Materials Science and Engineering
Maryland Energy Innovation Institute
Electrical and Computer Engineering
1108 Chemical and Nuclear Engineering Building


Ph.D., University of Wisconsin—Madison, 1985


Professor Ray Phaneuf joined UMD’s Department of Physics in 1985, where he used electron diffraction to study phase transformations on stepped Si(111) surfaces, resulting in the identification of a thermodynamically driven faceting associated with the formation of the (7x7) reconstruction. In 1989 he visited Ernst Bauer’s group in Clausthal, Germany, using low energy electron microscopy (LEEM) to image this faceting in real time. In 2000 he joined the Department of Materials Science and Engineering, and began studies of directed self-organization during growth and sublimation on semiconductor surfaces, using lithographic patterning. He was a founding member of the UM-MRSEC. In 2006 he was a visiting professor at the National Nanotechnology Laboratory, in Lecce, Italy. He is the founding director of the Interdisciplinary Minor in Nanoscience and Technology at the UMD. He is the author of more than 80 papers in archival journals, and has given over 40 invited talks on his work in the U.S., Europe and Japan. He was named the Laboratory for Physical Sciences Faculty Researcher of the year in 2002. In addition to MSE, he has affiliate positions in Physics and the Department of Electrical and Computer Engineering. His current research is in the fields of directing self-assembly of nanostructures at the mesoscale, plasmonics, and the application of nanotechnology to the conservation of cultural heritage.

Nanotechnology, surface physics, low energy electron microscopy, photoemission electron microscopy, scanned probe microscopies, templating for directed self-assembly.

Professor Phaneuf currently teaches or has taught the following courses:

  • ENES 100: Introduction to Engineering Design
  • ENMA 181: Introduction to Nanomaterials Seminar
  • ENMA 300: Introduction to Materials and Their Applications
  • ENMA 471: Diffusion, Kinetics and Phase Transformations
  • ENMA 490: Materials Design: Capstone Design Course
  • ENMA 698T: Nanotechnology Characterization


For a complete list of publications, please visit Professor Phaneuf's web site

  • “Characteristic Length Scales In Evolution Of Patterned Step Structure On Vicinal Si(111) Surface During High Temperature Annealing”, H-C. Kan, T. Kwon and R. J. PhaneufPhysical Review B 77, 205401-1,-6 (2008)
  •  “Fluorescence Enhancement from Size-selected Nanoparticles: The Role of an Active Substrate Substrate”, S.-H. Guo, S.-J. Tsai, H.-C.Kan, D.-H. Tsai, Michael R. Zachariah, and R. J. PhaneufAdvanced Materials, 20, 1424-1429 (2008)
  • “Near-surface modification of polystyrene by Ar+: Molecular dynamics simulations and experimental validation”, J. J. Végh*, D. Nest, D. B. Graves, R. Bruce, S. Engelmann, T. Kwon, R. J. Phaneuf, G. S. Oehrlein, B. K. Long and C. G. Willson, Applied Physics Letters 91, 233113-1,-3 (2007)
  •  “Plasma-surface interactions of model polymers for advanced photoresists using C4F8 /Ar discharges and energetic ion beams”, S. Engelmann, R. L. Bruce, T. Kwon, R. Phaneuf, G. S. Oehrlein*, Y. C. Bae, C. Andes, D. Graves and D. Nest, E. A. Hudson, P. Lazzeri, E.Iacob, and M. Anderle, Journal of Vacuum Science and Technology 25, 1353-1364 (2007)
  • “Spatial and Size-Resolved Electrostatic-Directed Deposition of Nanoparticles on a Field-Generating Substrate: Theoretical and Experimental Analysis”, D.-H. Tsai, T. Hawa, H.-C. Kan, R. J. Phaneuf, and M. R. Zachariah, Nanotechnology 18, 365201-36510 (2007)
  • “Transient Roughening Behavior and Spontaneous Pattern Formation during Plasma Etching of Nanoporous Silica”, T. Kwon, H.-C. Kan, G. S. Oehrlein, and R.J. PhaneufNanotechnology, 18, 055305-055309 (2007)
  • “Temperature-Driven Change in the Unstable Growth Mode on Patterned GaAs(001)”, T. Tadayyon-Eslami, H.-C. Kan, L. C. Calhoun and R. J. PhaneufPhysical Review Letters 97, 126101-1,-4 (2006)
  • “Evolution of Patterned GaAs(001) during Homoepitaxial Growth: Size vs. Spacing,”  H.-C. Kan, R. Ankam, S. Shah, K.M. Micholsky, T. Tadayyon-Eslami, L. Calhoun, and R. J. Phaneuf, Phys. Rev. B 73, 195410-1,-8 (2006).

2020 Capstone Winners Move Research Project to APL for Development

Team MOFIA project, selected for funding by the John Hopkins APL NATURE Pop-up Challenge, to be developed further.

MSE Students Selected as Finalists for the 2017 Collegiate Inventors Competition

Stretchable Silicon Photovoltaics is a new design for silicon solar cells.

NanoCenter Members Present Papers at Upcoming APS Meeting in Baltimore

Largest physics meeting hosts more than twenty NanoCenter presentations  

  • Fellow, American Physical Society